The US is the world’s leader in 4G technology but is losing the race when it comes to 5G technology. To help gain the competitive edge, there needs to be new advancements in high bandwidth, low distortion, high signal-to-noise ration and Low Noise Amplifiers “LNAs”. This will help US to regain dominance in the race to 6G.
Nantero holds the keys to the future of wireless communication due to our 20+ year experience with our fab-stable CNT Thin film process that we have developed for Memory. Currently, we are turning this process to transistors and CNT FETs “Field-Effect Transistors.” CNT FETs are high linearity, low-noise, high bandwidth devices that are critical for 5G and 6G communications, high-resolution image sensors, and radars.
CNT FETs exhibit highly linear signal amplification which translates to large dynamic range at low dc power levels which are critical for power constrained applications. CNT FETs offer a solution for next generation low-noise amplifier (LNA) application due to their intrinsic properties that allow for aggressive channel length scaling, excellent current drive capability, and a highly linear response.
Nantero is the only company in the world who has developed a CNT Solution that is both commercially manufacturable and Fab Stable on a 300mm wafer. Nantero is the future of the next generation of wireless communication devices.